Title :
Quantum tunneling behavior of nanocrystalline silicon/crystalline silicon heterostructure diode
Author :
Lu, J.J. ; Jiang, Z.Z. ; Chen, J. ; Pan, W. ; Shen, W.Z.
Author_Institution :
Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai
Abstract :
We report the observation of various quantum behaviors of nanocrystalline silicon/crystalline silicon heterostructure diodes. Tunneling has been proved to be the dominant transport mechanism for the device-grade diode operating below 80 K. For the sample which is composed by highly ordered nanocrystalline silicon, interesting physical phenomena have been revealed, which include high electron mobility, resonant tunneling and periodical negative differential conductivity under different reverse bias regions. A number of temperature dependent current-voltage measurements have been done to support our observations. Theoretical self-consistent calculations further explain the quantum tunneling mechanisms behind the experimental results.
Keywords :
electrical conductivity; electron mobility; elemental semiconductors; nanostructured materials; resonant tunnelling; semiconductor diodes; silicon; Si; crystalline silicon heterostructure diode; device-grade diode; electron mobility; nanocrystalline silicon; periodical negative differential conductivity; quantum tunneling behavior; resonant tunneling; reverse bias; temperature dependent current-voltage measurements; transport mechanism; Conductivity; Crystallization; Current measurement; Diodes; Electron mobility; Nanoscale devices; Resonant tunneling devices; Silicon; Temperature dependence; Temperature measurement;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585603
