Title :
Reliability aspects of gate oxide under ESD pulse stress
Author :
Ille, Adrien ; Stadler, Wolfgang ; Pompl, Thomas ; Gossner, Harald ; Brodbeck, Tilo ; Esmark, Kai ; Riess, Philipp ; Alvarez, David ; Chatty, Kiran ; Gauthier, Robert ; Bravaix, Alain
Author_Institution :
Infineon Technol., Munich
Abstract :
Power law time-to-breakdown voltage acceleration is investigated down to ultra-thin oxides (1.1 nm) in the ESD regime in inversion and accumulation. Breakdown modes, oxide degradation and device drifts under ESD like stress are discussed as function of the oxide thickness. The consequent impacts on the ESD design window are presented.
Keywords :
CMOS integrated circuits; electrostatic discharge; semiconductor device breakdown; ESD pulse stress; gate oxide; power law time-to-breakdown voltage acceleration; reliability aspects; ultra-thin oxides; Acceleration; CMOS technology; Degradation; Earth Observing System; Electric breakdown; Electrostatic discharge; MOS devices; Power system reliability; Stress; Voltage;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401771
