• DocumentCode
    2368646
  • Title

    Reliability aspects of gate oxide under ESD pulse stress

  • Author

    Ille, Adrien ; Stadler, Wolfgang ; Pompl, Thomas ; Gossner, Harald ; Brodbeck, Tilo ; Esmark, Kai ; Riess, Philipp ; Alvarez, David ; Chatty, Kiran ; Gauthier, Robert ; Bravaix, Alain

  • Author_Institution
    Infineon Technol., Munich
  • fYear
    2007
  • fDate
    16-21 Sept. 2007
  • Abstract
    Power law time-to-breakdown voltage acceleration is investigated down to ultra-thin oxides (1.1 nm) in the ESD regime in inversion and accumulation. Breakdown modes, oxide degradation and device drifts under ESD like stress are discussed as function of the oxide thickness. The consequent impacts on the ESD design window are presented.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; semiconductor device breakdown; ESD pulse stress; gate oxide; power law time-to-breakdown voltage acceleration; reliability aspects; ultra-thin oxides; Acceleration; CMOS technology; Degradation; Earth Observing System; Electric breakdown; Electrostatic discharge; MOS devices; Power system reliability; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-58537-136-5
  • Type

    conf

  • DOI
    10.1109/EOSESD.2007.4401771
  • Filename
    4401771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368646