DocumentCode :
2368657
Title :
Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors
Author :
Go, Jonghyun ; Nair, Pradeep R. ; Reddy, Bobby, Jr. ; Dorvel, Brian ; Bashir, Rashid ; Alam, Muhammad A.
Author_Institution :
Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Electronic sensing of biomolecules is an area of immerse interest for semiconductor industry. Here we utilize the remarkable sensitivity of double-gated field-effect transistors above the fundamental Nernst limit (59mV/pH) in pH sensing to improve the sensitivity of biomolecule detection in electrolyte screening limited conditions. Our simulation results and compact models are broadly supported by various experiments and will have important implications for the design and optimization of low cost, large throughput, semiconductor based biosensors.
Keywords :
biosensors; field effect transistors; nanoelectronics; nanosensors; pH measurement; Nernst limit; biomolecule detection; double-gated nanoscale field-effect transistors; electrolyte screening; pH sensing; ultra-sensitive DNA biosensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703325
Filename :
5703325
Link To Document :
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