Title :
Analysis of SiC BJT RBSOA
Author :
Gao, Yan ; Huang, Alex Q. ; Chen, Bin ; Agarwal, Anant K. ; Krishnaswami, Sumi ; Scozzie, Charles
Author_Institution :
Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC
Abstract :
The reverse biased safe operating area (RBSOA) of 1200V SiC BJT has been systematically analyzed by numerical simulation and experiments for the first time and compared with those for Si BJT. A square RBSOA of SiC BJT is predicted and verified by experiments. Our experiment results show that the SiC BJT can safely turn off 1100V, 67A (2990A/cm2 ), corresponding to 3.7 MW/cm peak turn-off power density. This is an extremely high power density indicating that no early "second breakdown" occurs
Keywords :
bipolar transistor switches; power semiconductor switches; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 1200 V; 67 A; SiC; bipolar junction transistors; numerical simulation; power switches; reverse biased safe operating area; Breakdown voltage; Current density; Current measurement; Doping; Electric breakdown; Laboratories; Power electronics; Pulse measurements; Silicon carbide; Switches;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666126
