DocumentCode
2368696
Title
External (transient) latchup phenomenon investigated by optical mapping (TIM) technique
Author
Domanski, Krzysztof ; Heer, Michael ; Esmark, Kai ; Pogany, Dionyz ; Stadler, Wolfgang ; Gornik, Erich
Author_Institution
Infineon Technol. AG, Neubiberg
fYear
2007
fDate
16-21 Sept. 2007
Abstract
Substrate current distribution as trigger for external latchup (LU) and transient latchup (TLU) is detected successfully by means of optical transient interferometric mapping (TIM) technique. The substrate current flow is studied on transient base and for various guard-ring configurations. TIM uncovers proximity effects causing substrate current crowding which are important for the definition of LU protection concepts.
Keywords
CMOS integrated circuits; light interferometry; substrates; transient analysis; CMOS integrated circuits; current crowding; external latchup phenomenon; guard-ring configurations; optical mapping technique; optical transient interferometric mapping; proximity effects; substrate current distribution; substrate current flow; transient latchup; Electrostatic discharge; Laser beams; Optical distortion; Optical interferometry; Optical refraction; Optical sensors; Optical variables control; Protection; Proximity effect; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-136-5
Type
conf
DOI
10.1109/EOSESD.2007.4401773
Filename
4401773
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