Title :
Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory
Author :
Chai, Yang ; Wu, Yi ; Takei, Kuniharu ; Chen, Hong-Yu ; Yu, Shimeng ; Chan, Philip C.H. ; Javey, Ali ; Wong, H. S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (~1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.
Keywords :
carbon nanotubes; electrodes; random-access storage; CNT electrodes; all-carbon memory; amorphous carbon layer; carbon nanotube electrodes; carbon-based RRAM; carbon-based complementary resistive switching; cell selection devices; cross-point area; nonvolatile resistive switching; ultra-dense memory;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703328
