4 kV, 10 A Bipolar Junction Transistors in 4H-SiC

4 kV, 10 A bipolar junction transistors have been demonstrated in 4H-SiC. The device conducts 10 A of collector current with a current gain of 34 at room temperature. The current gain reduces to 21 at 300 degC. Under reverse bias, the device is capable of blocking 4.7 kV with 50 muA leakage current. Room temperature switching measurements show a turn-on time of 168 ns and a turn-off time of 106 ns. These devices show some current gain instability, with the gain decreasing by 50% with time under forward stress. Initial observations reveal the presence of stacking faults in the base-emitter region when the device is forward biased