Layout design of multi-finger power SiGe HBTs for thermal stability improvement

Author

Dongyue, Jin ; Wanrong, Zhang ; Pei, Shen ; Xie Hongyun ; Jixin, Yin ; Yang, Wang ; Wei, Zhang ; Lijian, He ; Yongping, Sha ; Jia, Lia ; Junning, Gan

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2008

fDate

24-27 March 2008

Firstpage

829

Lastpage

832

Abstract

This paper proposes the layout design of multi-finger power SiGe HBTs with non-uniform finger spacing to improve the thermal stability. Two types of 20-finger SiGe HBTs with uniform and non-uniform finger spacing are fabricated. Experimental results shown that, for the HBT with non-uniform finger spacing, the power level for thermal regression is 22.8% higher than that of the uniform one, which contributes to the improvement of the maximum temperature and the non-uniformity of the temperature profile in the device. Therefore, the temperature profiles of HBTs are simulated to directly show thermal stability and verified by the experiment result. Basing on the verified simulation, a further optimum layout design of HBT with non-uniform spacing is proposed. It is shown that the maximum temperature difference is improved by 79.28% for the further optimum HBT, when compared with that of HBT with uniform finger spacing. These results indicate that optimizing the layout of HBTs with non-uniform finger spacing is very useful for improving the thermal properties of power HBTs.

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power bipolar transistors; thermal stability; SiGe; layout design; maximum temperature difference; multifinger power HBT; thermal regression; thermal stability improvement; uniform finger spacing; Germanium silicon alloys; Nanoelectronics; Silicon germanium; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585611

Filename

4585611