• DocumentCode
    2368792
  • Title

    Efficient 3D mesh adaptation in diffusion simulation

  • Author

    Chen, Tao ; Yergeau, Daniel W. ; Dutton, Robert W.

  • Author_Institution
    Integrated Circuits Lab., Stanford Univ., CA, USA
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    Summary form only given. Diffusion simulation is an important part in today´s TCAD research. While many works have been done on 2D mesh adaptations in diffusion simulation, 3D mesh adaptation remains a challenging area due to the excessive amount of grid points most mesh generation algorithms produce. In this paper, we apply a generalized octree grid generation algorithm for mesh adaptation. It has the advantage of reducing the number of nodes necessary for accurate simulations. New nodes are added efficiently to reflect the changing position of the junctions and old nodes are removed when they no longer have simulation significance.
  • Keywords
    diffusion; digital simulation; mesh generation; semiconductor doping; semiconductor process modelling; 3D mesh adaptation; TCAD research; diffusion simulation; generalized octree grid generation algorithm; grid points; nodes; Boron; Circuit simulation; Computational modeling; Design automation; Error correction; Laboratories; Level control; MOSFET circuits; Mesh generation; Nonlinear equations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865324
  • Filename
    865324