DocumentCode
2368792
Title
Efficient 3D mesh adaptation in diffusion simulation
Author
Chen, Tao ; Yergeau, Daniel W. ; Dutton, Robert W.
Author_Institution
Integrated Circuits Lab., Stanford Univ., CA, USA
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
171
Lastpage
172
Abstract
Summary form only given. Diffusion simulation is an important part in today´s TCAD research. While many works have been done on 2D mesh adaptations in diffusion simulation, 3D mesh adaptation remains a challenging area due to the excessive amount of grid points most mesh generation algorithms produce. In this paper, we apply a generalized octree grid generation algorithm for mesh adaptation. It has the advantage of reducing the number of nodes necessary for accurate simulations. New nodes are added efficiently to reflect the changing position of the junctions and old nodes are removed when they no longer have simulation significance.
Keywords
diffusion; digital simulation; mesh generation; semiconductor doping; semiconductor process modelling; 3D mesh adaptation; TCAD research; diffusion simulation; generalized octree grid generation algorithm; grid points; nodes; Boron; Circuit simulation; Computational modeling; Design automation; Error correction; Laboratories; Level control; MOSFET circuits; Mesh generation; Nonlinear equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865324
Filename
865324
Link To Document