DocumentCode :
2368793
Title :
20m Ω cm2660V Super Junction MOSFETs Fabricated by Deep Trench Etching and Epitaxial Growth
Author :
Takahashi, K. ; Kuribayashi, H. ; Kawashima, T. ; Wakimoto, S. ; Mochizuki, K. ; Nakazawa, H.
Author_Institution :
Fuji Electr. Adv. Technol. Co., Ltd., Nagano
fYear :
2006
fDate :
4-8 June 2006
Firstpage :
1
Lastpage :
4
Abstract :
600V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are numerically and experimentally investigated. By applying a p-type ion implantation to its termination region, a breakdown voltage (VB) of the fabricated SJ-MOSFETs successfully increased by 150V. The fabricated SJ-MOSFET shows an extremely small specific on-resistance (RonA) of 19.8mOmegacm2 at the breakdown voltage of 658V. This characteristic is lower than any other reported trench-filling type devices in the same voltage class
Keywords :
epitaxial growth; etching; ion implantation; power MOSFET; semiconductor junctions; 150 V; 658 V; 660 V; breakdown voltage; deep trench etching; epitaxial growth; p-type ion implantation; super junction MOSFET; trench-filling type devices; Breakdown voltage; Capacitance; Epitaxial growth; Etching; Impurities; Leakage current; MOSFETs; Microscopy; Oxidation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
Type :
conf
DOI :
10.1109/ISPSD.2006.1666130
Filename :
1666130
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2368793
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