مرکز منطقه ای اطلاع رساني علوم و فناوري - AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- <formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Oxynitride <formula formulatype="inline"> <img src="/images/tex/18645.gif" alt="\\

Title :

AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\\</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Sato, Takao ; Okayasu, J. ; Takikawa, Michio ; Suzuki, Toshi-kazu</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Advantest Labs. Ltd., Sendai, Japan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>34</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2013</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Mar-13</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>375</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>377</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We investigated AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-permittivity (high-k) oxynitride TaO<sub>x</sub>N<sub>y</sub> gate dielectric (k ~24) obtained by sputtering deposition. The MIS-HEMTs show excellent pulsed current-voltage characteristics, small off-leakage currents (<; 10<sup>-10</sup> A/mm), high on/off current ratios (> 10<sup>10</sup>), and favorable threshold voltage stabilities. From comparisons with MIS-HEMTs with TaO<sub>x</sub> gate dielectric, we conclude that N incorporation in gate dielectric can suppress current collapse and deep-level states.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; aluminium compounds; dielectric devices; dielectric materials; gallium compounds; high electron mobility transistors; leakage currents; sputter deposition; tantalum compounds; voltage regulators; AlGaN-GaN-TaO<sub>x</sub>N<sub>y</sub>; MIS-HEMT; current collapse suppression; high on-off current ratio; metal-insulator-semiconductor high-electron-mobility transistor; pulsed current-voltage characteristics; small off-leakage current; sputtering deposition; threshold voltage stability; very high-k oxynitride gate dielectric; Aluminum gallium nitride; Dielectrics; Gallium nitride; HEMTs; High K dielectric materials; Logic gates; MODFETs; <formula formulatype=$ $hbox{TaO}_{x}hbox{N}_{y}$; AlGaN-GaN; metal-insulator-semiconductor (MIS); oxynitride;