Title :
A triangular mesh with the interface protection layer suitable for the diffusion simulation
Author :
Syo, Toshiyuki ; Akiyama, Yutaka ; Kumashiro, Shigetaka ; Yokota, Ikuhiro ; Asada, Susumu
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
An automatic Delaunay partitioned mesh generation which is effective in reduction of numerical errors in a diffusion process near the interface or in the thin layer is proposed. An interface protection layer which consists of a rectangular mesh locally conformed to a material interface is introduced. A validity of the interface protection layer for avoiding an artificial threshold voltage shift of about 1 V due to a boron penetration through a pMOS gate oxide is demonstrated.
Keywords :
diffusion; digital simulation; ion implantation; mesh generation; numerical stability; semiconductor process modelling; Delaunay partitioned mesh generation; artificial threshold voltage shift; diffusion simulation; interface protection layer; material interface; numerical errors; pMOS gate oxide; rectangular mesh; triangular mesh; Boron; Diffusion processes; Impurities; Mesh generation; Protection; Silicon; Surface resistance; Thickness control; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865325
