• DocumentCode
    2368841
  • Title

    A 600V 8.7Ohmmm2Lateral Superjunction Transistor

  • Author

    Rüb, M. ; Bär, M. ; Deml, G. ; Kapels, H. ; Schmitt, M. ; Sedlmaier, S. ; Tolksdorf, C. ; Willmeroth, A.

  • Author_Institution
    Infineon Technol. Austria AG, Villach
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work we present for the first time experimental results and corresponding device simulations for high voltage lateral superjunction MOSFETs. We investigated experimentally various degrees of compensation for the lateral compensation structure and improved additionally the chip performance by optimizing the layout. We also realized different layouts in order to improve the chip performance. We show that a blocking voltage (BV) of 640V is achieved. Devices blocking above 600V achieve an on-resistance of 7.1Omega, which corresponds to a Rds,on times A of 8.7Omegamm2
  • Keywords
    MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor junctions; 600 V; 640 V; 7.1 ohm; MOSFET; blocking voltage; lateral superjunction transistor; Asia; Doping; Integrated circuit packaging; Integrated circuit technology; MOSFETs; Modems; Silicon; Switches; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
  • Conference_Location
    Naples
  • Print_ISBN
    0-7803-9714-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.2006.1666132
  • Filename
    1666132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368841