Title :
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
Author :
Huang, W. ; Khan, T. ; Chow, T.P.
Author_Institution :
Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET) realized on both p and n GaN epilayer on sapphire substrates. These MOSFETs, with different gate geometries, shows good DC characteristics with world-best field-effect mobility of 167 cm2/V-s and maximum blocking voltage of 940 V
Keywords :
III-V semiconductors; gallium compounds; power MOSFET; sapphire; wide band gap semiconductors; 940 V; GaN-Al2O3; GaN/sapphire substrates; enhancement-mode; field-effect mobility; metal-oxide field-effect transistor; n-channel MOSFET; Annealing; Fabrication; Gallium nitride; HEMTs; MODFETs; MOSFETs; Silicon carbide; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666133
