DocumentCode :
2368885
Title :
High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3
Author :
Thareja, G. ; Liang, J. ; Chopra, S. ; Adams, B. ; Patil, N. ; Cheng, S.-L. ; Nainani, A. ; Tasyurek, E. ; Kim, Y. ; Moffatt, S. ; Brennan, R. ; McVittie, J. ; Kamins, T. ; Saraswat, K. ; Nishi, Y.
Author_Institution :
Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
For the first time, high performance Ge nMOSFET is fabricated using laser annealing of ion-implanted antimony (Sb) dopants which provides donor activation beyond 1×1020 cm-3 in germanium. Record Ion/Ioff >; 105 is demonstrated for n+/p junctions combined with significant reduction of contact resistance to 7×10-7 Ω-cm2. Performance projections for ITRS HP 22nm technology node are also discussed.
Keywords :
MOSFET; antimony; germanium; ion implantation; laser beam annealing; Ge; Sb; antimony dopant activation; high performance germanium n-MOSFET; ion-implanted antimony dopants; laser annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703336
Filename :
5703336
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2368885
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