• DocumentCode
    2368885
  • Title

    High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3

  • Author

    Thareja, G. ; Liang, J. ; Chopra, S. ; Adams, B. ; Patil, N. ; Cheng, S.-L. ; Nainani, A. ; Tasyurek, E. ; Kim, Y. ; Moffatt, S. ; Brennan, R. ; McVittie, J. ; Kamins, T. ; Saraswat, K. ; Nishi, Y.

  • Author_Institution
    Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    For the first time, high performance Ge nMOSFET is fabricated using laser annealing of ion-implanted antimony (Sb) dopants which provides donor activation beyond 1×1020 cm-3 in germanium. Record Ion/Ioff >; 105 is demonstrated for n+/p junctions combined with significant reduction of contact resistance to 7×10-7 Ω-cm2. Performance projections for ITRS HP 22nm technology node are also discussed.
  • Keywords
    MOSFET; antimony; germanium; ion implantation; laser beam annealing; Ge; Sb; antimony dopant activation; high performance germanium n-MOSFET; ion-implanted antimony dopants; laser annealing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703336
  • Filename
    5703336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368885