Fabrication of nano-structured VOx film by low temperature ion beam sputtering and reductive annealing

Author

Wang, Xiaodong ; Guike Li ; Liang, Jiran ; Ji, An ; Hu, Ming ; Yang, Fuhua ; Liu, Ran ; Wu, Nanjian ; Chen, HongDa

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing

fYear

2008

fDate

24-27 March 2008

Firstpage

857

Lastpage

859

Abstract

VO_x thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VO_x thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VO_x film with relatively high TCR and semiconductor-metal phase transition.

Keywords

annealing; grain size; metal-insulator transition; semiconductor growth; semiconductor thin films; sputter deposition; vanadium compounds; VO_x; grain size; ion beam sputtering; nanostructured film; polycrystal structure; post reductive annealing process; semiconductor-metal phase transition; temperature 400 degC; time 2 hour; Fabrication; Nanoelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585618

Filename

4585618