Title :
Fabrication of nano-structured VOx film by low temperature ion beam sputtering and reductive annealing
Author :
Wang, Xiaodong ; Guike Li ; Liang, Jiran ; Ji, An ; Hu, Ming ; Yang, Fuhua ; Liu, Ran ; Wu, Nanjian ; Chen, HongDa
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.
Keywords :
annealing; grain size; metal-insulator transition; semiconductor growth; semiconductor thin films; sputter deposition; vanadium compounds; VOx; grain size; ion beam sputtering; nanostructured film; polycrystal structure; post reductive annealing process; semiconductor-metal phase transition; temperature 400 degC; time 2 hour; Fabrication; Nanoelectronics;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585618
