GaN Switching Devices for High-Frequency, KW Power Conversion

Author

Boutros, K.S. ; Chandrasekaran, S. ; Luo, W.B. ; Mehrotra, V.

Author_Institution

Rockwell Sci. Co. LLC, Thousand Oaks, CA

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

Large periphery GaN HEMT switches were designed and fabricated using field-plated gates on semi-insulating SiC substrates. The device layout was designed to handle both large currents and support the high bias conditions required for 100V switching. Blocking voltage of >200V was achieved on devices with saturation currents of 0.8A/mm. The switching characteristics of devices with gate periphery of 30-60mm were measured with both resistive and inductive loads, and showed rise- and fall-times of <25ns. Turn-on and turn-off switching losses of 11 muJ were measured at 100V/11A switching in resistive load. Maximum switching currents of 8 and 23A were measured with an inductive load at 60 and 40V, respectively. These results are the first demonstration of high-power (920W), high-speed (<25ns) switching of GaN devices for kW power conversion applications

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 100 V; 11 A; 23 A; 30 to 60 mm; 40 V; 60 V; 8 A; 920 W; GaN; HEMT switches; SiC; blocking voltage; field-plated gates; inductive loads; power conversion; power device; resistive loads; saturation currents; semiinsulating substrates; switching devices; Current measurement; Gallium nitride; HEMTs; Packaging; Power conversion; Power supplies; Radio frequency; Switches; Testing; Voltage; GaN HEMT; field-plate; high-speed switching; power device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666136

Filename

1666136