Title :
Concatenated BCH codes for NAND flash memories
Author :
Cho, Sung-gun ; Ha, Jeongseok
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
In this work, we consider designing high-rate error-control systems for storage devices using MLC NAND flash memories. Traditional systems designed with either a single BCH code or multiple short BCH codes may suffer from high decoding complexity or rate loss due to limited error-correcting capability, respectively. Aiming at achieving a stronger error-correcting capability with much reduced complexity, we propose an error-control system using a concatenation of short BCH codes with iterative decoding strategies. The performance of the proposed coding scheme is thoroughly analyzed and evaluated with computer simulations and a semi-analytic way at a target page-error rate, 10-14, which confirms our claims: the proposed coding scheme achieves good error-performance and complexity tradeoffs as compared to the traditional schemes and is very favorable for implementation.
Keywords :
BCH codes; NAND circuits; computational complexity; concatenated codes; error correction codes; error statistics; flash memories; iterative decoding; MLC NAND flash memories; complexity tradeoffs; computer simulations; concatenated BCH codes; error-correcting capability; error-performance; high decoding complexity; high-rate error-control systems design; iterative decoding strategies; multiple short BCH codes; rate loss; semianalytic way; storage devices; target page-error rate; Ash; Bit error rate; Decoding; Encoding; Interference; Iterative decoding; Threshold voltage;
Conference_Titel :
Communications (ICC), 2012 IEEE International Conference on
Conference_Location :
Ottawa, ON
Print_ISBN :
978-1-4577-2052-9
Electronic_ISBN :
1550-3607
DOI :
10.1109/ICC.2012.6363960