Title :
Reliable submicron vias using aluminum alloy high temperature sputter filling
Author :
Nishimura, Hiroshi ; Yamada, Tatsuya ; Ogawa, Shin-ichi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
The authors have developed a reliable submicron via formation technology using Al-Si-Cu high temperature sputter filling with a thin Ti underlayer. Complete filling of a 0.5 μm diameter via hole with an aspect ratio of 1.6 was achieved. Crystallinity of the aluminum in the via was single crystalline [111] textured normal to a substrate. The via chain resistance was found to depend on Ti underlayer thickness. The electromigration lifetime of the sputter filled via chain is found to be a factor of about 20 greater than that for a conventional one
Keywords :
VLSI; aluminium alloys; copper alloys; electromigration; integrated circuit technology; metallisation; reliability; silicon alloys; sputtered coatings; titanium; 0.5 micron; Al-Si-Cu alloy; Ti underlayer thickness; VLSI; aspect ratio; electromigration lifetime; high temperature sputter filling; reliability; reliable vias; single crystal via filling; submicron via formation technology; thin Ti underlayer; via chain resistance; Aluminum alloys; Crystallization; Electromigration; Filling; Metallization; Passivation; Plasma temperature; Silicon; Sputtering; Substrates;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152982
