Diamond-like carbon (DLC) liner with highly compressive stress formed on AlGaN/GaN MOS-HEMTs with in situ silane surface passivation for performance enhancement

Author

Liu, Bin ; Bin Liu ; Low, Edwin Kim Fong ; Chin, Hock-Chun ; Wei Liu ; Yang, Mingchu ; Tan, Leng Seow ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2010

fDate

6-8 Dec. 2010

Abstract

In this work, a highly compressive DLC liner (~ 6 GPa) was applied on AlGaN/GaN MOS-HEMTs for the first time. The compressive stress induced by DLC liner effectively reduces the tensile stress in the AlGaN layer, thus reducing the 2-DEG density. Devices with DLC show 22 % and 19% increase in drive current and peak transconductance, respectively, at V_G = 2 V and V_D = 10 V. Threshold voltage reduction of ~ 1 V was also observed for devices with DLC liner, as compared to ones without DLC liner. Devices in this work were also integrated with in situ silane (SiH₄) passivation technology.

Keywords

III-V semiconductors; aluminium compounds; diamond-like carbon; gallium compounds; high electron mobility transistors; passivation; wide band gap semiconductors; AlGaN-GaN; MOS-HEMT; diamond-like carbon liner; highly compressive stress; in situ silane surface passivation; performance enhancement; tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703340

Filename

5703340