DocumentCode :
2369005
Title :
Initial growth of conducting island-like structure on insulating polymer substrate
Author :
Ha, Peter C.T. ; Han, Z.J. ; You, G.F. ; McKenzie, D.R. ; Prawer, S. ; Tay, B.K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Nanyang
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
878
Lastpage :
881
Abstract :
Using ultrasharp conductive tip atomic force microscopy (c-AFM), we have measured the current voltage (I-V) characteristics of titanium ions implanted into polystyrene thin film spin coated onto silicon substrate. The surface morphology and the electric current between the tip and sample have been obtained simultaneously on the nanometer scale. Initial island-like growths structures were observed and are comparable with implantation time while surface energy and thermodynamics theory allowing the initial stages of film growth to be explained. Our conductivity measurements showed that there are conducting channels, forming of conducting island-like structures surrounded by the pool of insulator polystyrene. The conducting channel or island-like structures on polymer substrate can be a good candidate for the future of nano-plastic-electronics devices.
Keywords :
atomic force microscopy; electrical conductivity; ion implantation; island structure; polymer films; spin coating; surface energy; surface morphology; thin films; titanium; Jk:Ti; Si; charge carriers; conducting atomic force microscopy; conducting island-like structure; current-voltage characteristics; electric current; electrical conductivity; insulating polymer substrate; polystyrene thin film; silicon substrate; spin coating; surface energy; surface morphology; thermodynamics theory; titanium ions implantation; Atomic force microscopy; Atomic measurements; Conductivity measurement; Current measurement; Force measurement; Plastic insulation; Polymers; Substrates; Surface morphology; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585623
Filename :
4585623
Link To Document :
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