DocumentCode
2369067
Title
Development of ESD protection structures for BULK and SOI BCD6 technology
Author
Tazzoli, A. ; Cerati, L. ; Dissegna, M. ; Andreini, A. ; Zanoni, E. ; Meneghesso, G.
Author_Institution
DEI, Padova Univ.
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
ESD protection elements for 0.35mum smart power technology on SOI substrate are investigated, considering bulk technology as a reference. Heat dissipation issue, due to oxide isolation, is analyzed at simulation level. Starting from simulation results, proper sizing and ESD robustness verification are presented
Keywords
electrostatic discharge; power integrated circuits; silicon-on-insulator; 0.35 micron; SOI BCD6 technology; SOI substrate; electrostatic discharge protection; heat dissipation; oxide isolation; smart power technology; Analytical models; Biological system modeling; CMOS technology; Clamps; Electrostatic discharge; Isolation technology; Protection; Robustness; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666146
Filename
1666146
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