1200V Interconnection Technique with Isolated Self-Shielding Structure

Author

Kim, Sung-Lyong ; Jeon, Chang-Ki ; Kim, Min-Suk ; Kim, Jong-Jib

Author_Institution

Process Dev. Group, Fairchild Semicond., Bucheon

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

1200V interconnection technique with the isolated self-shielding concept was verified by simulation and realized without big process changes from the 600V HVIC process conditions. P-substrate resistivity, p-isolation dose, and interlayer thickness, which relieve the electric field under HV interconnection metal line, are found to be the main factors determining breakdown voltage. Experimental results have shown that over 1200V of breakdown voltage without isolation leakage current can be obtained when the p-substrate resistivity of 200ohm.cm and the p-isolation dose of 8.0e12cm^-2 are used

Keywords

integrated circuit design; integrated circuit interconnections; leakage currents; power integrated circuits; 1200 V; 600 V; breakdown voltage; electric field; high voltage integrated circuit; high voltage interconnection metal line; interconnection technique; interlayer thickness; isolated self-shielding structure; leakage current; p-isolation dose; p-substrate resistivity; Conductivity; Degradation; ISO standards; Isolation technology; Leakage current; Logic; Low voltage; Protection; Robustness; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666148

Filename

1666148