Title :
Low dielectric constant and hydrophobic nanoporous silica films
Author :
Jun, Shen ; Yumei, Zhu ; Xuejing, Lin ; Guangming, Wu ; Bin, Zhou ; Xingyuan, Ni ; Lanfang, Yao ; Guoqing, Wang ; Peiqing, Wang ; Qingfeng, Wang ; Xixian, Niu
Author_Institution :
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai
Abstract :
A novel route to prepare low-dielectric constant mesoporous SiO2 films is reported in this paper. Silicate sols are prepared with the precursor TEOS and template CTAB catalyzed by hydrochloric acid. The films are prepared by dip-coating process. FTIIR, XRD and AFM are used to characterize the films. The dielectric constants are measured by impedance analysis apparatus. The films with dielectric constants smaller than 2.2 can be acquired by adjusting the concentration of CTAB and aging time.
Keywords :
ageing; catalysts; dielectric materials; dip coating; materials preparation; mesoporous materials; nanoporous materials; permittivity; silicon compounds; sols; AFM; CTAB; FTIIR; SiO2; XRD; aging; dielectric constant; dip coating; hydrophobic nanoporous silica films; impedance analysis; silicate sols; Dielectric constant; Nanoelectronics; Nanoporous materials; Silicon compounds; films; hydrophobic; low dielectric constant;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585635
