DocumentCode
2369281
Title
AlGaN/GaN transistors for power electronics
Author
Mishra, Umesh K.
Author_Institution
ECE Dept., Univ. of California, Santa Barbara, CA, USA
fYear
2010
fDate
6-8 Dec. 2010
Abstract
The focus of GaN based devices has expanded beyond LEDs and lasers to the large market of power electronics where the materials properties of high electron mobility, high breakdown field and good thermal conductivity make it attractive in ultra-high efficiency applications ranging from power supplies, PV inverters to motor drives.
Keywords
III-V semiconductors; aluminium compounds; electric breakdown; electron mobility; gallium compounds; high electron mobility transistors; power electronics; power transistors; thermal conductivity; wide band gap semiconductors; AlGaN-GaN; HEMT; LED; breakdown field; electron mobility; lasers; motor drives; power electronics; power supply; power transistors; thermal conductivity; AlGaN/GaN; CAVET; HEMT; power electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703353
Filename
5703353
Link To Document