DocumentCode
2369295
Title
Silicon carbide based power devices
Author
Östling, Mikael
Author_Institution
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
fYear
2010
fDate
6-8 Dec. 2010
Abstract
Silicon carbide is considered as a strong power semiconductor material candidate to address the emerging market of hybrid electrical vehicle, photovoltaic inverter applications as well as power supplies. This paper presents the current technology status on the most promising device types that are or soon will be available on the market.
Keywords
power semiconductor devices; semiconductor materials; silicon compounds; current technology status; hybrid electrical vehicle; photovoltaic inverter applications; power semiconductor material; power supply; silicon carbide based power devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703354
Filename
5703354
Link To Document