• DocumentCode
    2369295
  • Title

    Silicon carbide based power devices

  • Author

    Östling, Mikael

  • Author_Institution
    Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Silicon carbide is considered as a strong power semiconductor material candidate to address the emerging market of hybrid electrical vehicle, photovoltaic inverter applications as well as power supplies. This paper presents the current technology status on the most promising device types that are or soon will be available on the market.
  • Keywords
    power semiconductor devices; semiconductor materials; silicon compounds; current technology status; hybrid electrical vehicle; photovoltaic inverter applications; power semiconductor material; power supply; silicon carbide based power devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703354
  • Filename
    5703354