• DocumentCode
    2369318
  • Title

    Ti/CVD-WSix/Blanket-W structure for fine contact filling application

  • Author

    Ishihara, Koichi ; Yamadai, Tsutomu ; Onishi, Shigeo ; Matsuda, Kenzo ; Sakiyama, Keizo

  • Author_Institution
    VLSI Res., Sharp Corp., Nara, Japan
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    185
  • Lastpage
    191
  • Abstract
    The blanket W process for the fine contact size and high aspect ratio has been developed by using the CVD-WSix films as a diffusion barrier. It was found that the CVD-WSix film has good step coverage and effective barrier properties. Low contact resistance of 58 Ω was obtained for the n+ diffusion layer when a contact diameter is 0.6 μm and the aspect ratio is 3. The Ti/CVD-WSi x/blanket-W structure also has much lower junction leakage compared to the conventional Ti/TiN/blanket-W structure
  • Keywords
    VLSI; chemical vapour deposition; metallisation; ohmic contacts; semiconductor-metal boundaries; titanium; tungsten; tungsten compounds; 0.6 micron; 58 ohm; CVD; Si-Ti-WSix-W; barrier properties; blanket W process; conformal step coverage; contact diameter; contact resistance; diffusion barrier; fine contact filling; fine contact size; high aspect ratio; junction leakage; ohmic contacts; step coverage; Adhesives; Annealing; Artificial intelligence; Contact resistance; Electrical resistance measurement; Filling; Laboratories; Semiconductor films; Sputtering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.152984
  • Filename
    152984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2369318