DocumentCode
2369327
Title
Advanced SiC and GaN power electronics for automotive systems
Author
Kanechika, Masakazu ; Uesugi, Tsutomu ; Kachi, Tetsu
Author_Institution
Toyota Central R&D Labs., Inc., Nagakute, Japan
fYear
2010
fDate
6-8 Dec. 2010
Abstract
A power switching device is one of the key elements to determine the performance of hybrid electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using wide-bandgap semiconductors, such as SiC and GaN, have been intensively developed for the future HEVs and EVs. In this paper, we review a role of the power devices in these automotive systems, the required device characteristics, and the recent status of SiC and GaN power devices.
Keywords
III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; HEV; SiC; automotive systems; hybrid electric vehicles; power electronics; power switching device; wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703356
Filename
5703356
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