Title :
Advanced SiC and GaN power electronics for automotive systems
Author :
Kanechika, Masakazu ; Uesugi, Tsutomu ; Kachi, Tetsu
Author_Institution :
Toyota Central R&D Labs., Inc., Nagakute, Japan
Abstract :
A power switching device is one of the key elements to determine the performance of hybrid electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using wide-bandgap semiconductors, such as SiC and GaN, have been intensively developed for the future HEVs and EVs. In this paper, we review a role of the power devices in these automotive systems, the required device characteristics, and the recent status of SiC and GaN power devices.
Keywords :
III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; HEV; SiC; automotive systems; hybrid electric vehicles; power electronics; power switching device; wide band gap semiconductors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703356
