DocumentCode
2369426
Title
A wide-swing VT-referenced circuit with insensitivity to device mismatch
Author
Yen, Chih-Jen ; Chung, Wen-Yaw ; Chi, Mely Chen
Author_Institution
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chungli, Taiwan
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
539
Lastpage
542
Abstract
This study presents a wide-swing VT referenced circuit which is insensitive to device mismatch in CMOS technology. The wide-swing cascode design is used to increase the output resistance, maximize the voltage-signal swings, and improve the current matching. The error current is greatly reduced by providing an additional mirrored current in the VT-referenced circuit. A start-up circuitry is also included, which affects only the circuit in the case that all currents in the loop are zero. All the bipolar-junction transistors are laid out using the p-substrate PNP structure. Analytic results indicate that the proposed circuit is insensitive to device mismatch, and provides a stable bias current accurately.
Keywords
CMOS analogue integrated circuits; bipolar transistors; reference circuits; CMOS technology; PNP structure; bias current; bipolar-junction transistors; current matching; device mismatch; error current; p-substrate; voltage-signal swings; wide-swing VT referenced circuit; wide-swing cascode design; Analog circuits; CMOS process; CMOS technology; Character generation; MOSFETs; Manufacturing processes; Operational amplifiers; Power amplifiers; Signal design; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2005. 18th International Conference on
ISSN
1063-9667
Print_ISBN
0-7695-2264-5
Type
conf
DOI
10.1109/ICVD.2005.39
Filename
1383331
Link To Document