Title :
High Thermal Conductivity Aluminum Nitride for High Power Microwave Windows - An Update
Author :
Savrun, Ender ; Nguyen, Vu
Author_Institution :
Sienna Technol., Inc.
Abstract :
We have undertaken an extensive study to determine and to control the factors to reduce the loss tangent of AlN to match those of Al2 O3 and BeO (tan5 equiv 0.0005) without adversely affecting its thermal conductivity, dielectric strength, and mechanical strength
Keywords :
III-V semiconductors; aluminium compounds; beryllium compounds; electric strength; mechanical strength; microwave tubes; thermal conductivity; wide band gap semiconductors; Al2O3; AlN; BeO; RF window; aluminum nitride; ceramic materials; dielectric strength; high power microwave windows; mechanical strength; thermal conductivity; Aluminum nitride; Ceramics; Conducting materials; Dielectric losses; Dielectric materials; Grain boundaries; Grain size; Radio frequency; Thermal conductivity; Thermal factors; Aluminum nitride; RF window; ceramic; microwave window; thermal conductivity;
Conference_Titel :
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0108-9
DOI :
10.1109/IVELEC.2006.1666171
