Transfer of physically-based models from process to device simulations: Application to advanced Strained Si/SiGe MOSFETs

Author

Bazizi, E.M. ; Fazzini, P.F. ; Cristiano, F. ; Pakfar, A. ; Tavernier, C. ; Payet, F. ; Skotnicki, T. ; Zechner, C. ; Zographos, N. ; Matveev, D. ; Cowern, N.E.B. ; Bennett, N.S. ; Ahn, C. ; Yoon, J.C.

Author_Institution

CNRS-LAAS, Toulouse, France

fYear

2010

fDate

6-8 Dec. 2010

Abstract

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si_0.8Ge_0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

Keywords

Ge-Si alloys; MOSFET; amorphisation; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor process modelling; silicon; Si-SiGe; advanced strained MOSFET; amorphization; device simulations; diffusion; dopant implantation; dopant-defect interactions; electrical characteristics; integrated process; physically-based models; physically-based process models; process simulation; simulation tool;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4424-7418-5

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2010.5703365

Filename

5703365