Title :
Transfer of physically-based models from process to device simulations: Application to advanced Strained Si/SiGe MOSFETs
Author :
Bazizi, E.M. ; Fazzini, P.F. ; Cristiano, F. ; Pakfar, A. ; Tavernier, C. ; Payet, F. ; Skotnicki, T. ; Zechner, C. ; Zographos, N. ; Matveev, D. ; Cowern, N.E.B. ; Bennett, N.S. ; Ahn, C. ; Yoon, J.C.
Author_Institution :
CNRS-LAAS, Toulouse, France
Abstract :
Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.
Keywords :
Ge-Si alloys; MOSFET; amorphisation; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor process modelling; silicon; Si-SiGe; advanced strained MOSFET; amorphization; device simulations; diffusion; dopant implantation; dopant-defect interactions; electrical characteristics; integrated process; physically-based models; physically-based process models; process simulation; simulation tool;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703365
