Title :
Analysis of the Complex Dielectric Permittivity Behavior of Composites based on Al2O3/AIN and Precursor-Derived-SiC in the 1 MHz 18GHz Frequency Range
Author :
Battat, J. ; Calame, J.P.
Author_Institution :
Naval Res. Lab., Washington, DC
Abstract :
The current research involves the synthesis of microwave-absorbing ceramic-based composites which exhibit a controllable variation in complex dielectric permittivity with respect to frequency. This study focuses on the synthesis and dielectric analysis of both porous and fully dense Al2O3-precursor-derived-SiC, as well as AlN-precursor-derived-SiC composites, obtained by applying various types of high temperature treatments to as-pyrolyzed porous composites
Keywords :
III-V semiconductors; aluminium compounds; ceramics; composite materials; microwave materials; permittivity; silicon compounds; wide band gap semiconductors; 1 to 18000 MHz; Al2O3-AlN; Al2O3-SiC; ceramic based composites; dielectric permittivity; high temperature treatments; microwave absorbing composites; porous composites; Argon; Conductivity; Dielectric materials; Dielectric measurements; Frequency measurement; Frequency response; Frequency synthesizers; Permittivity measurement; Polymers; Silicon carbide;
Conference_Titel :
Vacuum Electronics Conference, 2006 held Jointly with 2006 IEEE International Vacuum Electron Sources., IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0108-9
DOI :
10.1109/IVELEC.2006.1666173
