Title :
Electrical modulation of ion concentration in dual-gated nanochannels
Author :
Liu, Yang ; Ran, Qiushi ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
Abstract :
Coupled Poisson-Nernst-Planck and Stokes simulations demonstrate the operating principles of using electrical biases in dual-gated nano-fluidic channels to create localized and tunable solution zones of either depleted or accumulated ions. Scaling studies reveal that such ion modulations overcome the limit of counter-ion screening and remain effective even for channel widths greatly exceeding the Debye screening length. The underlying mechanism is attributed to the transport-induced de-screening of gating potentials.
Keywords :
ions; nanofluidics; Debye screening length; Stokes simulation; channel widths; counter-ion screening; coupled Poisson-Nernst-Planck; dual-gated nanochannels; dual-gated nanofluidic channels; electrical bias; electrical modulation; gating potentials; ion concentration; ion modulations; localized solution zones; transport-induced descreening; tunable solution zones;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703368