• DocumentCode
    2369565
  • Title

    Electrical modulation of ion concentration in dual-gated nanochannels

  • Author

    Liu, Yang ; Ran, Qiushi ; Dutton, Robert W.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Coupled Poisson-Nernst-Planck and Stokes simulations demonstrate the operating principles of using electrical biases in dual-gated nano-fluidic channels to create localized and tunable solution zones of either depleted or accumulated ions. Scaling studies reveal that such ion modulations overcome the limit of counter-ion screening and remain effective even for channel widths greatly exceeding the Debye screening length. The underlying mechanism is attributed to the transport-induced de-screening of gating potentials.
  • Keywords
    ions; nanofluidics; Debye screening length; Stokes simulation; channel widths; counter-ion screening; coupled Poisson-Nernst-Planck; dual-gated nanochannels; dual-gated nanofluidic channels; electrical bias; electrical modulation; gating potentials; ion concentration; ion modulations; localized solution zones; transport-induced descreening; tunable solution zones;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703368
  • Filename
    5703368