• DocumentCode
    2369718
  • Title

    Effect of process conditions and NiO on magnetoresistance of La-(Ca,Ba)-Mn-O composites

  • Author

    Shuiyuan Chen ; Xu, Yan ; Ye, Qingying ; Zhigao Chen ; Huang, Zhigao ; Wang, Dunhui ; Du, Youwei

  • Author_Institution
    Dept. of Phys., Nanjing Univ., Nanjing
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    1056
  • Lastpage
    1061
  • Abstract
    La2/3(Ca0.6Ba0.4)1/3MnO3/XNiO heterogenous composites have been synthesized by modified sol-gel method. Resistivity versus temperature in difference magnetic fields for the samples, as well as magnetoresistance (MR) versus magnetic in room temperature, have been measured. It is indicated that the addition of NiO results to the increase in resistivity and the weakeness in magnetization. Enhanced MR has been obtained in NiO-doped composites. The temperature dependence of magenetoresistance for NiO-doped composites in low magnetic field may be explained by the model of spin-polarized tunneling. The vary trend of MR in MR-T curve is similar to the result obtained by Monte Carlo simulation. MR in high magnetic field may be explained by spin polarization inside ferromagnetic grains.
  • Keywords
    Monte Carlo methods; barium compounds; calcium compounds; colossal magnetoresistance; lanthanum compounds; magnetic tunnelling; magnetisation; nanocomposites; nanoparticles; nickel compounds; spin polarised transport; La0.67(Ca0.6Ba0.4)0.33MnO3:NiO; Monte Carlo simulation; colossal magnetoresistance; ferromagnetic grains; heterogenous composites; magnetization; modified sol-gel method; process conditions effect; resistivity; room temperature; spin-polarized tunneling; temperature 293 K to 298 K; Magnetoresistance; Nanoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585665
  • Filename
    4585665