• DocumentCode
    2369724
  • Title

    A predictive contact reliability model for MEM logic switches

  • Author

    Kam, Hei ; Alon, Elad ; Liu, Tsu-Jae King

  • Author_Institution
    EECS Dept., Univ. of California, Berkeley, CA, USA
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Micro-electro-mechanical (MEM) switches are of interest for ultra-low-power electronics applications [1-5] because they offer the ideal characteristics of zero off-state leakage and abrupt switching behavior. The endurance of these devices can be limited by Joule heating at the contacting asperities (Figs. 1 and 2) which eventually leads to welding-induced failure. To provide guidance for reliable MEM switch design, a predictive contact reliability model is developed and validated in this work. The results show that device endurance depends not only on the contact material, but also on the operating voltage, series resistance, load capacitance, and logic style. Using the reliability model, endurance exceeding 1015 on/off cycles is projected for a scaled MEM switch technology operating at 1V.
  • Keywords
    digital integrated circuits; electrical contacts; integrated circuit reliability; logic circuits; low-power electronics; microswitches; semiconductor device models; Joule heating; MEM logic switches; abrupt switching; contact material; microelectromechanical switches; predictive contact reliability; ultra-low-power electronics; voltage 1 V; zero off-state leakage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703375
  • Filename
    5703375