DocumentCode
2369724
Title
A predictive contact reliability model for MEM logic switches
Author
Kam, Hei ; Alon, Elad ; Liu, Tsu-Jae King
Author_Institution
EECS Dept., Univ. of California, Berkeley, CA, USA
fYear
2010
fDate
6-8 Dec. 2010
Abstract
Micro-electro-mechanical (MEM) switches are of interest for ultra-low-power electronics applications [1-5] because they offer the ideal characteristics of zero off-state leakage and abrupt switching behavior. The endurance of these devices can be limited by Joule heating at the contacting asperities (Figs. 1 and 2) which eventually leads to welding-induced failure. To provide guidance for reliable MEM switch design, a predictive contact reliability model is developed and validated in this work. The results show that device endurance depends not only on the contact material, but also on the operating voltage, series resistance, load capacitance, and logic style. Using the reliability model, endurance exceeding 1015 on/off cycles is projected for a scaled MEM switch technology operating at 1V.
Keywords
digital integrated circuits; electrical contacts; integrated circuit reliability; logic circuits; low-power electronics; microswitches; semiconductor device models; Joule heating; MEM logic switches; abrupt switching; contact material; microelectromechanical switches; predictive contact reliability; ultra-low-power electronics; voltage 1 V; zero off-state leakage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703375
Filename
5703375
Link To Document