• DocumentCode
    2369906
  • Title

    Local structural properties and growth mechanism of ZnO nanostrcutures

  • Author

    Jeong, Eon-Seok ; Han, Sang-Wook ; Vayssieres, L.

  • Author_Institution
    Div. of Sci. Educ., Chonbuk Nat. Univ., Jeonju
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    1099
  • Lastpage
    1101
  • Abstract
    We investigated the growth mechanism of ZnO nanorods using in-situ extended X-ray absorption fine structure (EXAFS). ZnO nanorods were synthesized with a solution method and the structural properties around zinc atoms were measured by the in-situ EXAFS at every process. The synthesis was started with the solution of ZnNO3 powder and H2O. The solution was added with an amino acid complex and then heated up to 80degC. The EXAFS revealed that the zinc atoms of the solution had only two oxygen atoms without any second neighboring atoms, implying that ZnNO3 is amorphous. When the complex was applied to the solution, the second neighboring Zn atoms appeared, although there was a substantial amount of structural disorders existing in the Zn-Zn pairs. This result suggests that the nitrogen ions in the complex play a role in clustering ZnO. At 80degC, ZnO was rapidly crystallized and the structural disorders disappeared. The in-situ EXAFS measurements provided the critical information of ZnO crystallization in the solution.
  • Keywords
    EXAFS; II-VI semiconductors; crystallisation; nanostructured materials; nanotechnology; semiconductor growth; wide band gap semiconductors; zinc compounds; EXAFS; X-ray absorption fine structure; ZnO; amino acid complex; crystallization; nanorods; nanostructure growth; powder; solution method; structural properties; temperature 80 C; Mechanical factors; Nanoelectronics; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585674
  • Filename
    4585674