Title :
Photodetector structures for standard CMOS imaging applications
Author :
Durini, Daniel ; Hosticka, Bedrich J.
Author_Institution :
Univ. Duisburg- Essen/Fraunhofer IMS Duisburg, Duisburg
Abstract :
In this investigation we show how a standard 0.5 mum twin-well CMOS process can be used for CMOS imaging. The process features a single-polysilicon layer, as well as three metal layers, and it is LOCOS based. We discuss various issues affecting photodetection tasks in CMOS imaging applications and present an extensive study of possible photodetector structures. Also, we propose a novel CMOS imaging pixel structure, which exceeds the standard CMOS 2-D imaging performance.
Keywords :
CMOS image sensors; oxidation; photodetectors; silicon; LOCOS; photodetector; single-polysilicon layer; size 0.5 mum; twin-well CMOS imaging; CMOS process; CMOS technology; Capacitance; Epitaxial layers; P-n junctions; Photodetectors; Reflectivity; Silicon; Surface waves; Thyristors;
Conference_Titel :
Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-1000-2
Electronic_ISBN :
978-1-4244-1001-9
DOI :
10.1109/RME.2007.4401845
