DocumentCode :
2369983
Title :
Scaling guidelines for CMOS linear analog design
Author :
Levi, Timothée ; Lewis, Noëlle ; Tomas, Jean ; Fouillat, Pascal
Author_Institution :
Univ. Bordeaux 1, Talence
fYear :
2007
fDate :
2-5 July 2007
Firstpage :
209
Lastpage :
212
Abstract :
This paper proposes scaling guidelines for CMOS analog design during a technology migration. The scaling rules aim to be easy to apply and are based on the simplest MOS transistor model. The principle is to transpose one circuit topology from one technology to another, while keeping the main figures of merit, and the issue is to quickly calculate the new transistor dimensions. Furthermore, when the target technology has smaller minimum length, we expect to obtain a decrease of area. The proposed guidelines are applied to linear examples: OTAs. The results are compared on four CMOS processes whose minimum length are 0.8 mum, 0.35 mum, 0.25 mum and 0.12 mum.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; CMOS linear analog design; MOS transistor model; circuit topology; scaling guidelines; size 0.12 mum; size 0.25 mum; size 0.35 mum; size 0.8 mum; Analog circuits; CMOS technology; Circuit topology; Equations; Guidelines; Laboratories; MOSFETs; Semiconductor device modeling; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-1000-2
Electronic_ISBN :
978-1-4244-1001-9
Type :
conf
DOI :
10.1109/RME.2007.4401849
Filename :
4401849
Link To Document :
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