DocumentCode
2369983
Title
Scaling guidelines for CMOS linear analog design
Author
Levi, Timothée ; Lewis, Noëlle ; Tomas, Jean ; Fouillat, Pascal
Author_Institution
Univ. Bordeaux 1, Talence
fYear
2007
fDate
2-5 July 2007
Firstpage
209
Lastpage
212
Abstract
This paper proposes scaling guidelines for CMOS analog design during a technology migration. The scaling rules aim to be easy to apply and are based on the simplest MOS transistor model. The principle is to transpose one circuit topology from one technology to another, while keeping the main figures of merit, and the issue is to quickly calculate the new transistor dimensions. Furthermore, when the target technology has smaller minimum length, we expect to obtain a decrease of area. The proposed guidelines are applied to linear examples: OTAs. The results are compared on four CMOS processes whose minimum length are 0.8 mum, 0.35 mum, 0.25 mum and 0.12 mum.
Keywords
CMOS analogue integrated circuits; integrated circuit design; CMOS linear analog design; MOS transistor model; circuit topology; scaling guidelines; size 0.12 mum; size 0.25 mum; size 0.35 mum; size 0.8 mum; Analog circuits; CMOS technology; Circuit topology; Equations; Guidelines; Laboratories; MOSFETs; Semiconductor device modeling; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.
Conference_Location
Bordeaux
Print_ISBN
978-1-4244-1000-2
Electronic_ISBN
978-1-4244-1001-9
Type
conf
DOI
10.1109/RME.2007.4401849
Filename
4401849
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