• DocumentCode
    2369983
  • Title

    Scaling guidelines for CMOS linear analog design

  • Author

    Levi, Timothée ; Lewis, Noëlle ; Tomas, Jean ; Fouillat, Pascal

  • Author_Institution
    Univ. Bordeaux 1, Talence
  • fYear
    2007
  • fDate
    2-5 July 2007
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    This paper proposes scaling guidelines for CMOS analog design during a technology migration. The scaling rules aim to be easy to apply and are based on the simplest MOS transistor model. The principle is to transpose one circuit topology from one technology to another, while keeping the main figures of merit, and the issue is to quickly calculate the new transistor dimensions. Furthermore, when the target technology has smaller minimum length, we expect to obtain a decrease of area. The proposed guidelines are applied to linear examples: OTAs. The results are compared on four CMOS processes whose minimum length are 0.8 mum, 0.35 mum, 0.25 mum and 0.12 mum.
  • Keywords
    CMOS analogue integrated circuits; integrated circuit design; CMOS linear analog design; MOS transistor model; circuit topology; scaling guidelines; size 0.12 mum; size 0.25 mum; size 0.35 mum; size 0.8 mum; Analog circuits; CMOS technology; Circuit topology; Equations; Guidelines; Laboratories; MOSFETs; Semiconductor device modeling; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.
  • Conference_Location
    Bordeaux
  • Print_ISBN
    978-1-4244-1000-2
  • Electronic_ISBN
    978-1-4244-1001-9
  • Type

    conf

  • DOI
    10.1109/RME.2007.4401849
  • Filename
    4401849