DocumentCode :
2370050
Title :
1/f noise analysis of ZnO nanowire and thin film
Author :
Ke, Lin ; Li, Wang ; Chua, Soo Jin
Author_Institution :
Inst. of Mater. Res. & Eng., Singapore
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
1132
Lastpage :
1136
Abstract :
1/f noise spectral are obtained on ZnO nanowires thin films and ZnO hybrid materials at different concentration. Various 1/f noise models are used to analysis the results, the parameters such as: mobility, trap level and density, activation energy are extracted from the models. The results show that 1/f noise is a useful tool to monitor thin film and nanowires quality, as well as interface properties. By applying the models, the important parameters can be derived which is difficult to measure by other scientific instruments.
Keywords :
nanowires; noise; thin film circuits; zinc compounds; 1/f noise analysis; 1/f noise spectral; ZnO; thin film ZnO nanowires; zinc oxide; Nanoelectronics; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585681
Filename :
4585681
Link To Document :
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