DocumentCode :
2370060
Title :
Analog circuit design based on independently driven double gate MOSfet
Author :
Freitas, P. ; Billiot, G. ; Begueret, J.B. ; Lapuyade, H.
Author_Institution :
MINATEC, Grenoble
fYear :
2007
fDate :
2-5 July 2007
Firstpage :
221
Lastpage :
224
Abstract :
This paper reviews two basic analog circuits that employ new capabilities brought about by independently driven double gate CMOS transistors (IDGMOS). The subject of the first review is a 1 V supply voltage follower that uses IDGMOS to increase the input range up to the supply voltage and to enhance the biasing circuit of the follower. The second looks at a new general method to make fully balanced differential amplifiers (FBAs) with compact common-mode feed back. IDGMOS FBAs perform complete transistor reuse without using any extra device to execute the feed-back amplifier functions, i.e. error evaluation and amplification. An application of this is illustrated with the simulation of a simple 1-stage differential amplifier with 38 dB gain and a 90.3 degree phase margin. The complete feed back loop includes the aforementioned voltage follower. The common-mode open loop gain is only about 21 dB but the common-mode reference voltage range, within 10% relative error, remains between 0.3 V and 0.9 V.
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit feedback; differential amplifiers; integrated circuit design; operational amplifiers; reference circuits; analog circuit design; biasing circuit; common-mode open loop gain; compact common-mode feed back; double gate CMOS transistors; double gate MOSFET; error amplification; error evaluation; fully balanced differential amplifiers; gain 38 dB; single-stage differential amplifier; voltage 0.3 V to 0.9 V; voltage 1 V; voltage follower; Analog circuits; CMOS analog integrated circuits; CMOS technology; Circuit simulation; Coupling circuits; Differential amplifiers; Feeds; Laboratories; MOSFETs; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Research in Microelectronics and Electronics Conference, 2007. PRIME 2007. Ph.D.
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-1000-2
Electronic_ISBN :
978-1-4244-1001-9
Type :
conf
DOI :
10.1109/RME.2007.4401852
Filename :
4401852
Link To Document :
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