• DocumentCode
    2370103
  • Title

    Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

  • Author

    Bersuker, G. ; Gilmer, D.C. ; Veksler, D. ; Yum, J. ; Park, H. ; Lian, S. ; Vandelli, L. ; Padovani, A. ; Larcher, L. ; McKenna, K. ; Shluger, A. ; Iglesias, V. ; Porti, M. ; Nafría, M. ; Taylor, W. ; Kirsch, P.D. ; Jammy, R.

  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. The forming process is found to define the filament geometry, which in turn determines the temperature profile and, consequently, the switching characteristics. The findings point to the critical importance of controlling filament dimensions during the forming process (polarity, max current/voltage, etc.).
  • Keywords
    grain boundaries; hafnium compounds; leakage currents; random-access storage; titanium compounds; TiN-HfO2-TiN; conductive filament microscopic properties; filament geometry; grain boundaries; leakage current; metal oxide RRAM switching; temperature profile;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703394
  • Filename
    5703394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370103