• DocumentCode
    2370321
  • Title

    High performance single-grain Ge TFTs without seed substrate

  • Author

    Chen, Tao ; Ishihara, Ryoichi ; Mofrad, M. R Tajari ; Vollebregt, Sten ; van der Cingel, Johan ; van der Zwan, M. ; Schellevis, Hugo ; Beenakker, Kees

  • Author_Institution
    Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    We report high performance single-grain Ge TFTs by μ-Czochralski process. Electron mobilites are 3337cm2/Vs with on/off ratio of 108 @VDS=0.1V. Hole mobilities are 1719cm2/Vs with on/off ratio of 108 @VDS=0.05V. The high mobility is due to improved interface property and tensile stress.
  • Keywords
    electron mobility; substrates; thin film transistors; μ-Czochralski process; electron mobilites; high performance single-grain Ge TFT; hole mobilities; interface property; seed substrate; tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703404
  • Filename
    5703404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370321