• DocumentCode
    2370399
  • Title

    Very high performance non-volatile memory on flexible plastic substrate

  • Author

    Cheng, C.H. ; Chou, K.Y. ; Chin, Albert ; Yeh, F.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >;102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.
  • Keywords
    flexible electronics; random-access storage; MIM structure; RRAM; covalent-bond-dielectric/metal-oxide; current -0.5 nA; current 1.6 muA; flexible plastic substrate; low cost electrodes; non-volatile memory; power 5 muW; switching power; temperature 85 C; time 50 ns; voltage -2 V; voltage 3 V;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703408
  • Filename
    5703408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370399