Title :
Very high performance non-volatile memory on flexible plastic substrate
Author :
Cheng, C.H. ; Chou, K.Y. ; Chin, Albert ; Yeh, F.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >;102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.
Keywords :
flexible electronics; random-access storage; MIM structure; RRAM; covalent-bond-dielectric/metal-oxide; current -0.5 nA; current 1.6 muA; flexible plastic substrate; low cost electrodes; non-volatile memory; power 5 muW; switching power; temperature 85 C; time 50 ns; voltage -2 V; voltage 3 V;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703408
