DocumentCode

2370410

Title

A 300MHz multi-banked, eDRAM macro featuring GND sense, bit-line twisting and direct reference cell write

Author

Barth, J. ; Anand, D. ; Dreibelbis, J. ; Nelson, E.

Author_Institution

IBM MicroElectronics

Volume

2

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

118

Lastpage

427

Keywords

Application specific integrated circuits; Bandwidth; Delay; Hardware; Libraries; Logic; Microelectronics; Protocols; Read-write memory; Redundancy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.992171

Filename

992171