DocumentCode

2370436

Title

A quasi-matrix ferroelectric memory for future silicon storage

Author

Nishihara, T. ; Ito, Y.

Author_Institution

Sony Corporation

Volume

2

fYear

2002

fDate

7-7 Feb. 2002

Firstpage

122

Lastpage

429

Keywords

Capacitors; Costs; Degradation; Ferroelectric films; Ferroelectric materials; MOS devices; Nonvolatile memory; Random access memory; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7335-9

Type

conf

DOI

10.1109/ISSCC.2002.992174

Filename

992174