• DocumentCode
    2370595
  • Title

    Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays

  • Author

    Augustine, C. ; Raychowdhury, A. ; Somasekhar, D. ; Tschanz, J. ; Roy, K. ; De, Vivek K.

  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    This paper presents a numerical analysis of four genres of STT-MTJ stacks. A comprehensive study based on critical memory performance metrics such as TMR, JC, and write cycle shows the relative merits and demerits of each stack for embedded memory applications. The impact of stray fields in memory stability and cell density is analyzed. It shows the benefits of Synthetic AntiFerromagnet (SAF) free layer in providing immunity against thermal disturbances in scaled technology generations.
  • Keywords
    embedded systems; numerical analysis; random-access storage; 1T-1R memory arrays; STT-MTJ stacks; cell density; embedded memory; memory stability; numerical analysis; synthetic antiferromagnet;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703416
  • Filename
    5703416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2370595