Title :
Graphene-based fast electronics and optoelectronics
Author :
Avouris, Ph. ; Lin, Y.-M. ; Xia, F. ; Farmer, D.B. ; Wu, Y. ; Mueller, T. ; Jenkins, K. ; Dimitrakopoulos, C. ; Grill, A.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We present experimental results on high frequency field-effect transistors and fast photodetectors utilizing wafer-scale graphene grown epitaxially from silicon carbide.
Keywords :
field effect transistors; graphene; integrated optoelectronics; narrow band gap semiconductors; photodetectors; C; SiC; fast electronics; graphene; high frequency field-effect transistors; optoelectronics; photodetectors; wafer-scale utilization;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703418
