Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies

Author

Woon-Gi Yeo ; Nahar, Niru K. ; Sertel, Kubilay

Author_Institution

Electr. & Comput. Eng. Dept., Ohio State Univ., Columbus, OH, USA

fYear

2012

fDate

25-27 July 2012

Firstpage

24

Lastpage

25

Abstract

We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.

Keywords

electromagnetic wave absorption; frequency selective surfaces; terahertz materials; FIR band; FSS layer; TE polarization; THz band; THz frequency; TM polarization; absorption efficiency; crossed dipoles; dual-band wide-incident-angle absorber; dual-polarization FSS; dual-polarization frequency selective surface; electrically-thin dual-band absorber design; far-IR frequency; metallic ground; parasitic tip metallizations; silicon carbide substrate; transverse electric polarization; transverse magnetic polarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference (NAECON), 2012 IEEE National

Conference_Location

Dayton, OH

ISSN

0547-3578

Print_ISBN

978-1-4673-2791-6

Type

conf

DOI

10.1109/NAECON.2012.6531019

Filename

6531019