Title :
Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies
Author :
Woon-Gi Yeo ; Nahar, Niru K. ; Sertel, Kubilay
Author_Institution :
Electr. & Comput. Eng. Dept., Ohio State Univ., Columbus, OH, USA
Abstract :
We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.
Keywords :
electromagnetic wave absorption; frequency selective surfaces; terahertz materials; FIR band; FSS layer; TE polarization; THz band; THz frequency; TM polarization; absorption efficiency; crossed dipoles; dual-band wide-incident-angle absorber; dual-polarization FSS; dual-polarization frequency selective surface; electrically-thin dual-band absorber design; far-IR frequency; metallic ground; parasitic tip metallizations; silicon carbide substrate; transverse electric polarization; transverse magnetic polarization;
Conference_Titel :
Aerospace and Electronics Conference (NAECON), 2012 IEEE National
Conference_Location :
Dayton, OH
Print_ISBN :
978-1-4673-2791-6
DOI :
10.1109/NAECON.2012.6531019
