DocumentCode :
2370686
Title :
Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films
Author :
Nagashio, K. ; Yamashita, T. ; Fujita, J. ; Nishimura, T. ; Kita, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2010
fDate :
6-8 Dec. 2010
Abstract :
Field effect mobility of the graphene transferred on the SiO2/Si substrate scatters in various reports and is limited to a typical value of ~10,000 cm2/Vs. Without understanding the interaction between graphene and SiO2, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO2 surface on graphene characteristics.
Keywords :
Raman spectra; carrier mobility; field effect transistors; graphene; oxidation; plasma materials processing; silicon compounds; thin films; C-SiO2; FET mobility; Raman spectra; SiO2-Si; field effect transistor mobility; mechanically exfoliated graphene film; plasma treatment; reoxidization; transport properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2010.5703421
Filename :
5703421
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2370686
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