DocumentCode
2370707
Title
Power switch network design for MTCMOS
Author
Vilangudipitchai, Ramaprasath ; Balsara, Poras T.
Author_Institution
Center of Integrated Circuits & Syst. Lab., Texas Univ., Dallas, TX, USA
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
836
Lastpage
839
Abstract
Multithreshold CMOS (MTCMOS) has been a proven methodology to reduce leakage power in DSM designs. Previously lumped sleep transistors were designed for worst case condition, and hence occupied a large area. To reduce the area, cluster based sleep transistor design was proposed which takes into account simultaneous switching within the circuit blocks. We propose an improved method of clustering the sleep transistors by taking on chip decoupling capacitances into account. With the proposed heuristic, we are able to obtain sleep transistor area reduction of 64% with respect to conventional clustering methodology. The leakage current reduction for the circuit blocks is in the order of 2000× to 8000× with respect to the ones without sleep transistors. We propose gate clustering based on ATPG vectors to handle large design. The experimental results are shown for ISCAS´85 benchmarks.
Keywords
CMOS integrated circuits; automatic test pattern generation; capacitance; distributed shared memory systems; leakage currents; logic CAD; threshold logic; transistors; ATPG vectors; DASTD; DSM design; MTCMOS; chip decoupling capacitance; cluster sleep transistor design; gate clustering; leakage current reduction; leakage power reduction; multithreshold CMOS; power switch network design; sleep transistor area reduction; sleep transistor clustering; Automatic test pattern generation; Batteries; Capacitance; Capacitors; Circuit simulation; Leakage current; Power grids; Sleep; Switching circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2005. 18th International Conference on
ISSN
1063-9667
Print_ISBN
0-7695-2264-5
Type
conf
DOI
10.1109/ICVD.2005.140
Filename
1383382
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